United States Project Notice - Vertical Gan Photoconductive Semiconductor Switch For HVDC Breakers


Project Notice

PNR 61479
Project Name Vertical GaN Photoconductive Semiconductor Switch for HVDC Breakers
Project Detail SixPoint Materials and Texas Tech University will develop a photoconductive semiconductor switch (PCSS) that will enable low-cost, fast-acting, high-efficiency, high-voltage HVDC circuit breakers. SixPoint will develop the key material, bulk crystals of semi-insulating gallium nitride (GaN), and Texas Tech will design the device structure and fabricate a 100 kV PCSS. Combining the GaN PCSS with a conventional mechanical switch will create a hybrid HVDC circuit breaker suitable for a multi-terminal HVDC grid. One 100 kV GaN PCSS could potentially replace 56 semiconductor switches made of conventional silicon technology. Potential Impact: The advancement of HVDC circuit breaker technology will accelerate the development of multi-point HVDC systems required for offshore wind and solar power plants. If successful, this project will :
Funded By Self-Funded
Sector Energy & Power
Country United States , Northern America
Project Value USD 1,782,000

Contact Information

Company Name SixPoint Materials
Web Site https://arpa-e.energy.gov/technologies/projects/vertical-gan-photoconductive-semiconductor-switch-hvdc-breakers

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