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Toshiba has developed a 2,200 V silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) for inverters and energy storage systems, to help inverter manufacturers reduce size an ......
Brek Electronics has applied its silicon carbide composite architecture in its new 200 kW and 400 kW inverters. Brek Electronics has developed two string inverters with its novel composite architect ......