Contract Notice Laboratory Optical And Precision Equipments Excl Glasses System For Reactive Ion EtchingDescription Further Information According To The Description Of The Linethe Process Chamber Must Be Milled From An Aluminum Block And Made Without Unnecessary Seals The Overall System Design Including The Icp Source And Pumping System Must Be Radially Symmetric To Ensure Best Uniformity Over A Wide Range Of Parameters The Process Chamber Must Have Flanges For The Pumping System Min 100 Mm And A Viewing Window Min 40 Mm In Addition At Least One 40 Mm Flange Must Be Available Blind Flanged The Cooling Of The Substrate Electrode Must Be Done By Liquid Nitrogen The Cooling Heating Of The Substrate Electrode Must Be At Least In A Temperature Range Of 150Oc To 400Oc Be Possible The Substrate Electrode Must Have A Diameter Of At Least 240 Mm A Helium Backside Cooling Of The Substrate Electrode Mechanical Clamping To Improve The Thermal Contact Must Be Present The Helium Flow Must Be Measured And Displayed On The Pc For System Control The Control Of The Helium Flow Must Be Done Via The Pressure As A Control Parameter Holders For Different Wafer Sizes 8 6 4 Must Be Included Holders For Smaller Or Irregular Shaped Specimens Are Optional The Temperature Is To Be Entered Into The Control As A Process Parameter The Temperature Of The Processes Must Be From 150Oc To 400OC Cooling Must Be Possible Through Ln2 An Electric Heater Must Be Integrated For This Please Specify At Least 20 References The System Control Is To Be Done By Programmable Logic Controller Plc With Digital And Analog I O Data Logging Must Be Performed At A Speed Of At Least 250 Ms Process Steps Must Be Faster Or Equal To 10 Ms A Lan Connection To The Plant Control Must Be Possible Automatic Monitoring Of The Process Sequence With Predefinable Limit Values For The Parameters Must Be Possible A Way To Manually Control The Process On The Computer Must Be Possible The System Must Be Able To Perform Automatic Leak Tests And Automatic Mfc Calibration The System Must Have A User Level Management At Least Three Levels When Operating The Optical Emission Control System A Pc Controlled System Must Be Capable Of Recording The Full Spectrum From 200 Nm To 800 Nm Simultaneously The Control Has To Be Integrated Into The System Software The Rie System Must Be Able To Be Operated Without Mechanical Changes In Rie Mode And In Icp Mode Without Conversion The Rie System Must Have The Necessary Connections Flanges To Retrofit End Point Detection Using Optical Emission And Laser Interferometry Including X Y Stage And Ccd Camera Substrate Electrode The System Must Have A 13 56 Mhz Generator With Automatic Rf Tuning The Auto Tuner Must Be Directly Connected To The Source No Cables The Auto Tuning Unit Reflected Power Must Be The Capacities Remain In The Last Position When Changing To A New Process Step Working Mode 1 The Capacities Start From A Fixed Pre Selectable Position Working Mode 2 Manual Setting Of Capacity Positions Working Mode 3 The Performance Of The System Should Be 300W At 13 56 Mhz The System Must Have Its Own Data Logging Of The Plasma And Tuning Unit The Plasma Source Should Have Power Bias Control The Starting Positions Of All Capacities Of The Matching Units Must Be Able To Be Selected Independently For Each Process Step Also A Fully Manual Operation Must Be Possible They Must Also Be Recorded In The Datalogging The System Must Work Homogeneously For 200 Mm Wafers Time Limit For Receipt Of Tenders Or Requests To Participate Date 08 07 2019 Local Time 13 00 Disclaimer The Above Text Is Machine Translated For Accurate Information Kindly Refer The Original Document
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