| Project Detail |
Low-cost, fast, small, and reliable solid-state power devices are crucial for efficient power conversion in data centers, solar farms, power grids, and electric vehicles (EVs). Today, high voltage power devices are mainly made of silicon (Si). Gallium nitride (GaN)-based devices are regarded as excellent candidates for the next-generation of high-frequency and high-power applications. Current GaN power devices are commercially available for up to 650 V operation, but they still suffer from limited current and voltage capability and relatively large on-state specific resistance.
Project Innovation + Advantages:
The Massachusetts Institute of Technology (MIT) and collaborators will develop a new generation of power electronics based on vertical GaN superjunction diodes and transistors that can break the theoretical limit of today’s GaN unipolar power devices. MIT’s new superjunction structure will provide transistors and diodes with an on-resistance at least 5X better than today’s best GaN or silicon carbide (SiC) power devices, and at least 50-100X better than today’s commercial Si power devices with similar voltage ratings. The advantages of the new GaN power devices significantly improve their potential for commercialization in medium- and high-voltage and high-current applications.
Potential Impact:
MIT’s proposed GaN power devices will not only offer better performance for efficient power conversion in data centers, solar farms, power grid and electric vehicles., but also can potentially reduce device cost. |
