Contract Notice Miscellaneous General And Special Purpose MachineryAward Procedure For The Supply Of An Icp Rie Plasma Etching SystemDescription The Delivery Installation And Ready To Use Handover Including Functional Test Instruction And Acceptance Of An Icp Rie Plasma Etching System For The Realization Of Plasma Assisted Etching Of Metallic And Dielectric Thin Films With Layer Thicknesses From A Few Nanometers Up To A Few Micrometers As Well As For The Realization Of Plasma Assisted Deep Etching Of Silicon Substrates Will Be Announced With Thicknesses Of A Few 100m Suitable Materials To Be Etched Include Metallic Superconductors Such As Niobium And Aluminum Normally Conducting Materials Such As Gold Silver And Copper Metallic Alloys Such As Gold Palladium Gold Erbium And Silver Erbium As Well As Dielectric Layers In The Form Of Silicon Oxides Or Silicon Nitrides In Addition Low Temperature Etching With High Rate And Anisotropy Should Be Realized By A High Purity Silicon Substrate In Principle Said Etching Must Be Carried Out With High Lateral And Vertical Homogeneity Due To The Requirements Of The Authorization Procedure For Large Appliances The Maximum Amount Of Funding Available Is Limited To Eur 388 000 Including Vat Or Equivalent Duty And Any Discounts Offers Exceeding This Limit Can Not Be Considered Calculatory Vat And Customs Duties Are Included In The Limit Time Limit For Receipt Of Tenders Or Requests To Participate Date 08 10 2019 Local Time 10 00 Disclaimer The Above Text Is Machine Translated For Accurate Information Kindly Refer The Original Document
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