Contract Notice Microelectronic Machinery And ApparatusIon Beam Deposition Equipment Cluster 200 Mm Ibad Icpcvd Description Cea Leti Wishes To Acquire Equipment With Depositors Etchings Of Technique Ibad Ion Beam Assisted Deposition And Icpcvd Inductively Coupled Plasma Chemical Vapor Deposition It Will Be Able To Treat Silicon Wafers Or Of Glass Diameters 200 Mm The Equipment Will Be Installed In The Micro Electronic Clean Room Of Cea Leti And Will Be Used 24 Hours A Day The Ibad Reactor Should Be Able To Deposit Etch At Temperatures Between 10 c And Up To 300 c Oc The Icpvcd Reactor Shall Be Capable Of Depositing Etching At Room Temperature And Up To 450Oc The Automated Software Must Ensure Easy Operation And Stable Performance The Footprint In A Clean Room Should Be As Low As Possible Time Limit For Receipt Of Tenders Or Requests To Participate Date 07 10 2019 Local Time 12 00 Disclaimer The Above Text Is Machine Translated For Accurate Information Kindly Refer The Original Document
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